![]() We design our “SHT” line of rectifiers, to offer low leakage currents at high temperatures. These devices offer low conduction losses and high linearity. These compact TO-46 packaged SJTs offer high current gains (>110), 0/+5 V TTL control, and robust performance. “ GeneSiC’s Transistor and Rectifier products are designed and manufactured from the grounds up to enable high temperature operation. The TO-46 metal can packages as well as the associated packaging processes used to create these products critically enable long term use where high reliability is critical. With temperature independent, near-zero reverse recovery switching characteristics, SiC Schottky rectifiers are ideal candidates for use in high efficiency, high temperature circuits. High Temperature SiC Schottky Rectifiers being offered by GeneSiC show low on-state voltage drops, and industry’s lowest leakage currents at elevated temperatures. These devices can be used as efficient amplifiers as they promise a much higher linearity than any other SiC switch. Unique advantages of the SJT in contrast to other SiC switches is its higher long term reliability, >20 usec short circuit capability, and superior avalanche capability. Estos interruptores están libres de óxido de puerta., normalmente apagado, exhibir un coeficiente de temperatura positivo de resistencia, and are capable of being driven by 0/+5 V TTL gate drivers, a diferencia de otros interruptores SiC. The transient energy losses and switching times are independent of junction temperature. High Temperature SiC Junction Transistors ( SJT) offered by GeneSiC exhibit sub-10 nsec rise/falls times enabling >10 MHz switching as well as a square reverse biased safe operation area (RBSOA). These devices are targeted for use in a wide variety of applications including a wide variety of downhole circuits, geothermal instrumentation, solenoid actuation, general purpose amplification, and switched mode power supplies. The use of high temperature, high voltage and low on-resistance capable SiC Transistors and Rectifiers will reduce the size/weight/volume of electronics applications requiring higher power handling at elevated temperatures. These discrete components are designed and manufactured to operate under ambient temperatures of greater than 215 OC. High Temperature (>210 OC) Junction Transistors and Rectifiers in small form factor metal can packages offer revolutionary performance benefits to a variety of applications including amplification, low noise circuitry and downhole actuator controlsĭULLES, Virginia, maSemiconductor GeneSiC, un proveedor pionero y global de una amplia gama de carburo de silicio ( SiC) power semiconductors today announces the immediate availability of a line of compact, high temperature SiC Junction Transistors as well as a line of rectifiers in TO-46 metal can packages.
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